8 inch N type SiC Wafer Manufacturer 4 inch P type SiC Substrate
8 inch N type SiC Wafer Manufacturer 4 inch P type SiC Substrate
Negotiable Min Order Quantity Unit
- Required Quantity
-
- Place of Origin
- China
- Payment Terms
- T/T
- Production method
- Available
- Shipping / Lead Time
- Negotiable / Negotiable
- Category
- Semiconductors
Suzhou Hengmairui Materials Technology Co.,Ltd.
- Membership
- BIZ
- Recent Visit
- Sep 24, 2024
- Country / Year Established
-
China
/
2009
- Business type
- Manufacturer
- Verified Certificate
-
9
| Product name | 8 inch N type SiC Wafer Manufacturer 4 inch P type SiC Substrate | Certification | - |
|---|---|---|---|
| Category | Semiconductors | Material | - |
| Keyword | sic substrate supplier , p type sic wafer manufacturer , n type sic wafer manufacturer | Unit Size | - |
| Brand name | - | Unit Weigh | - |
| origin | China | Stock | 10 |
| Supply type | Available | HS code | - |
Product Information
As the global SiC Wafer Supplier，HMT company can offering largest 8 inch Nitrogen doped N type SiC Wafer and 6 inch Al-doping P type SiC Wafer. Both have different grade for choice. Meanwhile, we also offering un-doped SiC Wafer which means high resistivity >1E5ohm.cm. Furthermore, the stopped production dimension like 2 inch 4 inch ,we can supply them too. Welcome customers contact us and cooperating us. we will fully support you.
SiC substrate is the core material of the newly developed wide band gap semiconductor, and the devices produced by it have the characteristics of high temperature resistance, high pressure resistance, high frequency, high power, radiation resistance, etc., with the advantages of fast switching speed and high efficiency, which can greatly reduce the power consumption of the product, improve the energy conversion efficiency and reduce the product volume.
SiC Wafer has excellent characteristics such as high pressure resistance, high temperature resistance and high frequency performance, which can effectively break through the physical limits of traditional silicon-based semiconductor devices and their materials, and develop a new generation of semiconductor devices that are more suitable for high pressure, high temperature, high power, high frequency and other conditions.
As the global SiC Wafer Supplier，HMT company can offering largest 8 inch Nitrogen doped N type SiC Wafer and 6 inch Al-doping P type SiC Wafer. Both have different grade for choice. Meanwhile, we also offering un-doped SiC Wafer which means high resistivity >1E5ohm.cm. Furthermore, the stopped production dimension like 2 inch 4 inch ,we can supply them too. Welcome customers contact us and cooperating us. we will fully support you.
SiC substrate is the core material of the newly developed wide band gap semiconductor, and the devices produced by it have the characteristics of high temperature resistance, high pressure resistance, high frequency, high power, radiation resistance, etc., with the advantages of fast switching speed and high efficiency, which can greatly reduce the power consumption of the product, improve the energy conversion efficiency and reduce the product volume.
SiC Wafer has excellent characteristics
such as high pressure resistance, high temperature resistance and high
frequency performance, which can effectively break through the physical
limits of traditional silicon-based semiconductor devices and their
materials, and develop a new generation of semiconductor devices that
are more suitable for high pressure, high temperature, high power, high
frequency and other conditions.
B2B Trade
| Price (FOB) | Negotiable | transportation | Air Transportation |
|---|---|---|---|
| MOQ | Negotiable | Leadtime | Negotiable |
| Payment Options | T/T | Shipping time | Negotiable |
- President
- Cory
- Address
- LiSheng Industrial Building,60 Suli Road
- Product Category
- Semiconductors
- Year Established
- 2009
- No. of Total Employees
- 51-100
- Company introduction
-
Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.
- Main Product
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