Silicon Carbide wafer SiC crystal substrate wafer

Silicon Carbide wafer SiC crystal substrate wafer


Negotiable Min Order Quantity Unit

Required Quantity
Place of Origin
China
Payment Terms
T/T
Production method
Negotiable
Shipping / Lead Time
Negotiable / Negotiable
Keyword
sic crystal substrate wafer, silicon carbide wafer, sic substrate
Category
Semiconductors
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Suzhou Hengmairui Materials Technology Co.,Ltd.

Membership
BIZ
Recent Visit
May 15, 2024
Country / Year Established
China China / 2009
Business type
Manufacturer
Verified Certificate

9

DUNS

Product name Silicon Carbide wafer SiC crystal substrate wafer Certification -
Category Semiconductors Ingredients -
Keyword sic crystal substrate wafer , silicon carbide wafer , sic substrate Unit Size -
Brand name - Unit Weigh -
origin China Stock -
Supply type - HS code -

Product Information

 

Homray Material Technology provide high quality silicon carbide wafer to electronic and optoelectronic industry. Silicon carbide wafer is a next generation semiconductor material, with unique electrical propertiesand excellent thermal properties , compared to silicon wafer and gallium arsenide wafer , silicon carbide wafer is more suitable for high temperature and high power device. Silicon carbide wafer can be supplied in diameter 2 inch,3 inch,4inch,6inch , both 4-H-N or 6-H-N or 4/6H-Si. 

 

Homray Material Technology offers silicon carbide wafers in different grades.

Standard quality wafers meet high demands for production purposes, research grade substrates are the inexpensive alternative for research and development and for process trials. 

 

B2B Trade

Price (FOB) Negotiable transportation -
MOQ Negotiable Leadtime Negotiable
Payment Options T/T Shipping time Negotiable

Suzhou Hengmairui Materials Technology Co.,Ltd.

Country / Year Established
China China / 2009
Membership
BIZ
Recent Visit
May 15, 2024
Business type
Manufacturer

9

DUNS

President
Cory
Address
LiSheng Industrial Building,60 Suli Road
Product Category
Semiconductors
Year Established
2009
No. of Total Employees
51-100
Company introduction

Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.

 

 

 

 

 

 

 

 

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