SiC Substrate Wafer Manufacturer 4 inch P grade  on axis and off axis SiC wafer with 4H polytype. Normally Conductive N type SiC Wafer orientation is off axis  4.0 toward<1120>±0.5° and Semi-insulated SI type SiC wafer orientation is on axis <0001>±0.25°. We supply all grades of SiC Wafer based on different customers requirements. Meanwhile, we also offer all diameters (2 inch 4 inch 6 inch and 8inch) As cut SiC wafers without lapping and polishing and SiC Boules.

SiC substrates can be divided into semi-insulating and conductive types. The semi-insulated substrate mainly achieves the intrinsic high resistivity of the crystal by removing various impurities in the crystal (especially shallow level impurities), while the conductive substrate achieves the low crystal resistivity by introducing nitrogen in the crystal growth process.

The polishing process of SiC wafer can be divided into rough polishing and fine polishing, rough polishing is mechanical polishing, the purpose is to improve the processing efficiency of polishing. The key research direction of mechanical polishing of SiC single crystal substrate is to optimize the process parameters, improve the surface roughness of wafer and increase the material removal rate. Fine polishing is single-side polishing, chemical mechanical polishing is the most widely used polishing technology, through chemical corrosion and mechanical wear synergistic effect, to achieve material surface removal and flattening.