By working with HMT company, you can get customized SiC wafers to meet your specific requirements.  Even for customized products, you will still appreciate the fast lead time and preferential prices from HMT when compared to most other SiC wafer manufactures. Thus,more and more domestic and foreign technology companies,research institutions , famous high school have switched from other suppliers to HMT company when they have purchase demand of SiC wafers or SiC boules.

High temperature resistance. The band gap width of silicon carbide is 2-3 times that of silicon, the electrons are not easy to transition at high temperatures, and can withstand higher operating temperatures, and the thermal conductivity of silicon carbide is 4-5 times that of silicon, making the device heat dissipation easier and the limit operating temperature higher. The high temperature resistance can significantly increase power density while reducing the requirements on the cooling system, making the terminal lighter and smaller.

Withstand high pressure. The breakdown electric field strength of silicon carbide is 10 times that of silicon, which can withstand higher voltages and is more suitable for high-voltage devices.

High frequency resistance. Silicon carbide has a saturated electron drift rate twice that of silicon, resulting in the absence of current tailing during the shutdown process, which can effectively improve the switching frequency of the device and realize the miniaturization of the device.

Low energy loss. Compared with silicon material, silicon carbide has very low on-resistance and low on-loss. At the same time, the high band-gap width of silicon carbide greatly reduces the leakage current and the power loss. In addition, the silicon carbide device does not have current