SiC Wafer Manufacturers and Suppliers

SiC Wafer Manufacturers and Suppliers

SiC Wafer Manufacturers and Suppliers


Negotiable Min Order Quantity Unit

Required Quantity
Place of Origin
China
Payment Terms
T/T
Production method
Available
Shipping / Lead Time
Negotiable / Negotiable
Keyword
sic wafer manufacturers, sic substrate manufacturers
Category
Semiconductors

Suzhou Hengmairui Materials Technology Co.,Ltd.

Membership
BIZ
Recent Visit
Dec 13, 2024
Country / Year Established
China China / 2009
Business type
Manufacturer
Verified Certificate

9

DUNS

Product name SiC Wafer Manufacturers and Suppliers Certification -
Category Semiconductors Material -
Keyword sic wafer manufacturers , sic substrate manufacturers Unit Size -
Brand name - Unit Weigh -
origin China Stock 25
Supply type Available HS code -

Product Information

SiC Wafer Manufacturer HMT provide 2 inch to 8 inch  on axis and off axis SiC wafer with 4H polytype. Normally Conductive N type SiC Wafer orientation is off axis  4.0 toward<1120>±0.5° and Semi-insulated SI type SiC wafer orientation is on axis <0001>±0.25°. We supply all grades of SiC Wafer based on different customers requirements. Meanwhile, we also offer all diameters (2 inch 4 inch 6 inch and 8inch) As cut SiC wafers without lapping and polishing and SiC Boules.


The output of a single 8-inch SiC substrate chip is about 2 times that of a 6-inch, 4 times that of a 4-inch, and can be partially equipped with silicon-based power chip production lines, which can greatly reduce costs and improve efficiency.

 

Taking the 32mm² area of bare metal (chip) as an example, the number of bare metal on the 8-inch SiC substrate increased by nearly 90% compared to the 6-inch, while the proportion of the edge bare metal was reduced from 14% to 7%, and the utilization rate of the 8-inch substrate increased by 7% compared to the 6-inch.

SiC Wafer Manufacturer HMT provide 2 inch to 8 inch  on axis and off axis SiC wafer with 4H polytype. Normally Conductive N type SiC Wafer orientation is off axis  4.0 toward<1120>±0.5° and Semi-insulated SI type SiC wafer orientation is on axis <0001>±0.25°. We supply all grades of SiC Wafer based on different customers requirements. Meanwhile, we also offer all diameters (2 inch 4 inch 6 inch and 8inch) As cut SiC wafers without lapping and polishing and SiC Boules.


The output of a single 8-inch SiC substrate chip is about 2 times that of a 6-inch, 4 times that of a 4-inch, and can be partially equipped with silicon-based power chip production lines, which can greatly reduce costs and improve efficiency.

 

Taking the 32mm² area of bare metal (chip) as an example, the number of bare metal on the 8-inch SiC substrate increased by nearly 90% compared to the 6-inch, while the proportion of the edge bare metal was reduced from 14% to 7%, and the utilization rate of the 8-inch substrate increased by 7% compared to the 6-inch.

 

B2B Trade

Price (FOB) Negotiable transportation Express
MOQ Negotiable Leadtime Negotiable
Payment Options T/T Shipping time Negotiable

Suzhou Hengmairui Materials Technology Co.,Ltd.

Country / Year Established
China China / 2009
Membership
BIZ
Recent Visit
Dec 13, 2024
Business type
Manufacturer

9

DUNS

President
Cory
Address
LiSheng Industrial Building,60 Suli Road
Product Category
Semiconductors
Year Established
2009
No. of Total Employees
51-100
Company introduction

Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.

 

 

 

 

 

 

 

 

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