China As-cut SiC wafer Manufactuer with 600um thickness
China As-cut SiC wafer Manufactuer with 600um thickness
Negotiable Min Order Quantity Unit
- Required Quantity
-
- Place of Origin
- China
- Payment Terms
- T/T
- Production method
- Available
- Shipping / Lead Time
- Negotiable / Negotiable
- Category
- Semiconductors
Suzhou Hengmairui Materials Technology Co.,Ltd.
- Verified Certificate
-
9
Product name | China As-cut SiC wafer Manufactuer with 600um thickness | Certification | - |
---|---|---|---|
Category | Semiconductors | Material | - |
Keyword | sic slicing wafer supplier , as-cut sic wafer manufactuer | Unit Size | - |
Brand name | - | Unit Weigh | - |
origin | China | Stock | 25 |
Supply type | Available | HS code | - |
Product Information
China As-cut SiC wafer Manufactuer with 600um thickness
The As-cut SiC Wafer is a high-quality silicon carbide wafer with a diameter of 4 inches and a thickness of about 400um. It is known for its excellent properties and is widely used in the semiconductor industry for various applications.The As-cut SiC Wafer has a standard diameter of 4 inches and 6 inches which are the most commonly used size in the industry. This size makes it compatible with existing processing equipment, reducing the need for costly modifications and increasing production efficiency.
The As-cut SiC Wafer is widely used in power electronics, thanks to its high thermal conductivity, low power losses, and high voltage capabilities. These wafers are essential for manufacturing high-efficiency power devices such as Schottky diodes, MOSFETs, and IGBTs.
The As-cut SiC Wafer is also ideal for applications in the LED and optoelectronics industry. With its high bandgap energy and low defect density, these wafers enable the production of high-performance LEDs with improved efficiency, brightness, and reliability.
The As-cut SiC Wafer is a popular choice for manufacturing solar cells due to its excellent thermal and chemical stability, making it suitable for harsh environmental conditions. These wafers are used to produce high-efficiency solar cells with improved durability and longevity.
China As-cut SiC wafer Manufactuer with 600um thickness
The As-cut SiC Wafer is a high-quality silicon carbide wafer with a diameter of 4 inches and a thickness of about 400um. It is known for its excellent properties and is widely used in the semiconductor industry for various applications.The As-cut SiC Wafer has a standard diameter of 4 inches and 6 inches which are the most commonly used size in the industry. This size makes it compatible with existing processing equipment, reducing the need for costly modifications and increasing production efficiency.
The As-cut SiC Wafer is widely used in power electronics, thanks to its high thermal conductivity, low power losses, and high voltage capabilities. These wafers are essential for manufacturing high-efficiency power devices such as Schottky diodes, MOSFETs, and IGBTs.
The As-cut SiC Wafer is also ideal for applications in the LED and optoelectronics industry. With its high bandgap energy and low defect density, these wafers enable the production of high-performance LEDs with improved efficiency, brightness, and reliability.
The As-cut SiC Wafer is a popular choice for manufacturing solar cells due to its excellent thermal and chemical stability, making it suitable for harsh environmental conditions. These wafers are used to produce high-efficiency solar cells with improved durability and longevity.
B2B Trade
Price (FOB) | Negotiable | transportation | Air Transportation |
---|---|---|---|
MOQ | Negotiable | Leadtime | Negotiable |
Payment Options | T/T | Shipping time | Negotiable |
- President
- Cory
- Address
- LiSheng Industrial Building,60 Suli Road
- Product Category
- Semiconductors
- Year Established
- 2009
- No. of Total Employees
- 51-100
- Company introduction
-
Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.
- Main Product
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