8 inch As-cut SiC wafer Manufacturer 4H-N
8 inch As-cut SiC wafer Manufacturer 4H-N
Negotiable Min Order Quantity Unit
- Required Quantity
-
- Place of Origin
- China
- Payment Terms
- T/T
- Production method
- Available
- Shipping / Lead Time
- Negotiable / Negotiable
- Category
- Semiconductors
Suzhou Hengmairui Materials Technology Co.,Ltd.
- Membership
- BIZ
- Recent Visit
- Dec 13, 2024
- Country / Year Established
-
China
/
2009
- Business type
- Manufacturer
- Verified Certificate
-
9
| Product name | 8 inch As-cut SiC wafer Manufacturer 4H-N | Certification | - |
|---|---|---|---|
| Category | Semiconductors | Material | - |
| Keyword | as-cut sic wafer manufacturer , sic slicing wafer supplier , raw-cut sic substrate supplier | Unit Size | - |
| Brand name | - | Unit Weigh | - |
| origin | China | Stock | 5 |
| Supply type | Available | HS code | - |
Product Information
As you know 8 inch is the newest dimension of SiC substrate, we can supply both 8 inch and 6 inch As-cut SiC wafer on the market. 4H-N conductive type and semi-insulating type are both available in HMT company. Our leadtime of as-cut SiC wafer will be 3~5 weeks upon purchase quantity. Please feel free to contact us for without lapping raw SiC substrate parameters and quotation.
8 inch As-cut SiC wafer Manufacturer 4H-N
As you know 8 inch is the newest dimension of SiC substrate, we can supply both 8 inch and 6 inch As-cut SiC wafer on the market. 4H-N conductive type and semi-insulating type are both available in HMT company. Our leadtime of as-cut SiC wafer will be 3~5 weeks upon purchase quantity. Please feel free to contact us for without lapping raw SiC substrate parameters and quotation.
Unlike traditional silicon-based device, the quality of the SiC substrate and the surface properties can't meet the requirements of manufacturing devices directly, so in manufacturing high power and high voltage high frequency components, can not directly on the SiC substrate production device, and must be additional deposition of a high quality epitaxial single crystal substrate material, and manufacture of various types of devices on the epitaxial layer.
At present, SiC is the use of homogenous epitaxial growth technology, equipment and growth technology has been relatively mature, can grow more than 100~200μm SiC epitaxial material, but in the epitaxial growth by the substrate quality and processing level, will produce defects.
B2B Trade
| Price (FOB) | Negotiable | transportation | Air Transportation |
|---|---|---|---|
| MOQ | Negotiable | Leadtime | Negotiable |
| Payment Options | T/T | Shipping time | Negotiable |
- President
- Cory
- Address
- LiSheng Industrial Building,60 Suli Road
- Product Category
- Semiconductors
- Year Established
- 2009
- No. of Total Employees
- 51-100
- Company introduction
-
Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.
- Main Product
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