AlGaN/GaN On SiC RF HEMT Wafer Manufacturer
4 inch AlGaN/GaN On SiC RF HEMT Wafer Manufacturer
Negotiable Min Order Quantity Unit
- Required Quantity
-
- Place of Origin
- China
- Payment Terms
- T/T
- Production method
- Available
- Shipping / Lead Time
- Negotiable / Negotiable
- Category
- Semiconductors
Suzhou Hengmairui Materials Technology Co.,Ltd.
- Membership
- BIZ
- Recent Visit
- Dec 13, 2024
- Country / Year Established
- China / 2009
- Business type
- Manufacturer
- Verified Certificate
-
9
Product name | AlGaN/GaN On SiC RF HEMT Wafer Manufacturer | Certification | - |
---|---|---|---|
Category | Semiconductors | Material | - |
Keyword | algan/gan on sic , gan on sic epi wafer manufacturer , algan/gan on sic hemt | Unit Size | - |
Brand name | - | Unit Weigh | - |
origin | China | Stock | 15 |
Supply type | Available | HS code | - |
Product Information
4 inch AlGaN/GaN On SiC RF HEMT Wafer Manufacturer
Homray Material Technology not only offer 4 inch AlGaN/GaN On SiC RF HEMT Wafer but also can suuply 6 inch and 8 inch GaN Channel/AlGaN Barrier SiC HEMT Wafer. we manufacture high quality but with reasonable price on the market. We have seveal professional technical egineers can help and evaluate your detailed structure and parameters. please contact us for quotation now!
B2B Trade
Price (FOB) | Negotiable | transportation | Air Transportation |
---|---|---|---|
MOQ | Negotiable | Leadtime | Negotiable |
Payment Options | T/T | Shipping time | Negotiable |
- President
- Cory
- Address
- LiSheng Industrial Building,60 Suli Road
- Product Category
- Semiconductors
- Year Established
- 2009
- No. of Total Employees
- 51-100
- Company introduction
-
Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.
- Main Product
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