AlGaN/GaN On SiC RF HEMT Wafer Manufacturer

AlGaN/GaN On SiC RF HEMT Wafer Manufacturer

4 inch AlGaN/GaN On SiC RF HEMT Wafer Manufacturer


Negotiable Min Order Quantity Unit

Required Quantity
Place of Origin
China
Payment Terms
T/T
Production method
Available
Shipping / Lead Time
Negotiable / Negotiable
Keyword
algan/gan on sic, gan on sic epi wafer manufacturer, algan/gan on sic hemt
Category
Semiconductors

Suzhou Hengmairui Materials Technology Co.,Ltd.

Membership
BIZ
Recent Visit
Dec 13, 2024
Country / Year Established
China China / 2009
Business type
Manufacturer
Verified Certificate

9

DUNS

Product name AlGaN/GaN On SiC RF HEMT Wafer Manufacturer Certification -
Category Semiconductors Material -
Keyword algan/gan on sic , gan on sic epi wafer manufacturer , algan/gan on sic hemt Unit Size -
Brand name - Unit Weigh -
origin China Stock 15
Supply type Available HS code -

Product Information

4 inch AlGaN/GaN On SiC RF HEMT Wafer Manufacturer 

 

Homray Material Technology not only offer 4 inch AlGaN/GaN On SiC RF HEMT Wafer but also can suuply 6 inch and 8 inch GaN Channel/AlGaN Barrier SiC HEMT Wafer. we manufacture high quality but with reasonable price on the market. We have seveal professional technical egineers can help and evaluate your detailed structure and parameters. please contact us for quotation now!


 

 

B2B Trade

Price (FOB) Negotiable transportation Air Transportation
MOQ Negotiable Leadtime Negotiable
Payment Options T/T Shipping time Negotiable

Suzhou Hengmairui Materials Technology Co.,Ltd.

Country / Year Established
China China / 2009
Membership
BIZ
Recent Visit
Dec 13, 2024
Business type
Manufacturer

9

DUNS

President
Cory
Address
LiSheng Industrial Building,60 Suli Road
Product Category
Semiconductors
Year Established
2009
No. of Total Employees
51-100
Company introduction

Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.

 

 

 

 

 

 

 

 

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