Welcome to Sigetronics.

Sigetronics aims to contribute to the worldwide welfare with state-of-the-art M-FAB technology through provision of smarter, greener, and even more informative functions. Our unique structure of M-FAB has constructed four typical sectors of ESD, Sensor, Power, and RF & Foundry.

Our products are made of special semiconductor materials such as Si(Ge), GaN, and other compounds, which are beneficial for developing modules, terminals, systems, and infra structures. We strive to resolve issues regarding prospected energy consumption or environmental disasters by focusing on the best solutions for speed, size, weight, and efficiency among other necessary properties. We believe that new convergence technology will be essential to such problems in the future.

We will endeavor to have our customers grow world-class businesses in various fields. Sigetronics has incubated a faith of sharing as well as enriching assets, which is essential for building a strong mutual benefiting relationship in business and trade. Likewise, all employees of Sigetronics are willing to serve with the spirit of open-mind, hot-heart, and cool-brain as always.

Your thoughtful considerations are deeply appreciated.

With kind regards, Sigetronics.

[ZENER(for LED)]

▶ HBM : ±4~±8KV

▶ IEC61000-4-2 : ±1~±30kV

▶ TYPE :

  - Unidirectional structure : P-Top, N-Top

  - Bidirectional structure : PNP, NPN

▶ Pad : Single, Double, Triple, Flip Chip

▶ VZ : ±4, ±7, ±12, ±14, ±16, ±20, ±100, ±200, ±400V
▶ Thickness : 100, 150, 200um

▶ Other chip specs are available on demand

[TVS(ULC-TVS)]

▶ Capacitance : ＜0.5~10pF

▶ IEC61000-4-2 : ±1~±30kV

▶ Robust EDS : IPP＞30A in TLP

▶ Triggering voltage : 4~100V

▶ VZ : ±4, ±7, ±12, ±14, ±16, ±20, ±100, ±200, ±400V
▶ Power-PPPM : 10~1500W( tp=10/1000us)

▶ Flexible package selection(SOT, LLP, Flip chip)

[ESD/EMI Filter]

▶ EMI/RFI Noise Filter

▶ IEC61000-4-2 : 15kV(air), 8kV(contect)

▶ Cutoff frequency: 150~600MHz

▶ Large attenuation bandwidth : 800MHz~6GHz

▶ Low clamping voltage
▶ Breakdown voltage(VBR) : 6~14V

[SBD&FRD]

▶ Wide breakdown voltage control

▶ SBD : 40, 60, 100, 200V

▶ FRD : 200, 300, 400, 600V

▶ Thermal stability : up to 150ºC

▶ Fast and soft recovery : ＜30ns
▶ Excellent reliability

▶ Flexible package selection : TO220, D2PAK, etc.

[POWER-MOSFET]

▶ Advanced MOSFET process technology

▶ High voltage(BVDDS) : 200, 300, 400, 600, 800V

▶ Low gate change(Qg) : 3.9nC(typ.)

▶ Low RDS(on) : 11.5Ω(max.)

▶ Flexible package selection : TO220, etc.