High Purity SiC Substrate Manufacturer Single Crystal SiC Wafer
High Purity SiC Substrate Manufacturer Single Crystal SiC Wafer
Negotiable Min Order Quantity Unit
- Required Quantity
-
- Place of Origin
- China
- Payment Terms
- T/T
- Production method
- Available
- Shipping / Lead Time
- Negotiable / Negotiable
- Keyword
- sic wafer supplier, sic substrate manufacturer, single crystal sic wafer, n type sic substrate
- Category
- Semiconductors
Suzhou Hengmairui Materials Technology Co.,Ltd.
- Membership
- BIZ
- Recent Visit
- Dec 13, 2024
- Country / Year Established
- China / 2009
- Business type
- Manufacturer
- Verified Certificate
-
9
Product name | High Purity SiC Substrate Manufacturer Single Crystal SiC Wafer | Certification | - |
---|---|---|---|
Category | Semiconductors | Material | - |
Keyword | sic wafer supplier , sic substrate manufacturer , single crystal sic wafer , n type sic substrate | Unit Size | - |
Brand name | - | Unit Weigh | - |
origin | China | Stock | 10000 |
Supply type | Available | HS code | - |
Product Information
High Purity SiC Substrate Manufacturer Single Crystal SiC Wafer
Homray Material Technology is the leading manufacturer in SiC Substrate Wafer in China. We offer high purity 4H-SI SiC wafer with thichness 500um, double side polished. We also provdie ultralow MPD SiC wafer, ≤1cm-2.
Homray Material Technology offers the best price on the market for high quality SiC wafers and silicon carbide epitaxial wafers. The major products are 2 inch, 3 inch, 4 inch 6 inch silicon carbide substrate, widely used in electronic devices with high power and high frequency, light emitting diode (LED) and other. light-emitting diode (LED) is the use of semiconductor electrons and holes in a combination of electronic components, is an energy-saving cold light source. SiC material has the advantages of low lattice mismatch with GaN, high thermal conductivity. The third generation of semiconductors represented by SiC has a high bandwidth, high thermal conductivity, high field breakdown, high saturation electron drift rate, stable chemical properties, high hardness, abrasion resistance, high bond.
B2B Trade
Price (FOB) | Negotiable | transportation | Air Transportation |
---|---|---|---|
MOQ | Negotiable | Leadtime | Negotiable |
Payment Options | T/T | Shipping time | Negotiable |
- President
- Cory
- Address
- LiSheng Industrial Building,60 Suli Road
- Product Category
- Semiconductors
- Year Established
- 2009
- No. of Total Employees
- 51-100
- Company introduction
-
Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.
- Main Product
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