Gallium Nitride substrate N type GaN Wafer GaN template manu
Negotiable Min Order Quantity Unit
- Required Quantity
-
- Place of Origin
- China
- Payment Terms
- T/T
- Production method
- Negotiable
- Shipping / Lead Time
- Negotiable / Negotiable
- Category
- Semiconductors
Suzhou Hengmairui Materials Technology Co.,Ltd.
- Membership
- BIZ
- Recent Visit
- Dec 13, 2024
- Country / Year Established
-
China
/
2009
- Business type
- Manufacturer
- Verified Certificate
-
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| Product name | Gallium Nitride substrate N type GaN Wafer GaN template manu | Certification | - |
|---|---|---|---|
| Category | Semiconductors | Ingredients | - |
| Keyword | gallium nitride substrate supplier , gan wafer manufacturer , gan template supplier | Unit Size | - |
| Brand name | - | Unit Weigh | - |
| origin | China | Stock | - |
| Supply type | - | HS code | - |
Product Information
Gallium nitride, GaN substrate. GaN has a wide direct bandgap, strong atomic bonds and high thermal conductivity, etc., and it is a strong ability on anti-radiation, Not only is the short-wavelength optoelectronic materials, Also the replacement materials of high temperature semiconductor device, GaN can be used to make blue and green LED, or violet, ultraviolet light LD, ultraviolet detectors and high-frequency high-power electronic devices.
GaN is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form it resists cracking and can be deposited in thin film on sapphire or silicon carbide, despite the mismatch in their lattice constants.GaN can be doped with silicon (Si) or with oxygen to n-type and with magnesium (Mg) to p-type.
B2B Trade
| Price (FOB) | Negotiable | transportation | - |
|---|---|---|---|
| MOQ | Negotiable | Leadtime | Negotiable |
| Payment Options | T/T | Shipping time | Negotiable |
- President
- Cory
- Address
- LiSheng Industrial Building,60 Suli Road
- Product Category
- Semiconductors
- Year Established
- 2009
- No. of Total Employees
- 51-100
- Company introduction
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Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.
- Main Product
