Silicon Carbide wafer SiC semiconductor wafer manufacturer
Negotiable Min Order Quantity Unit
- Required Quantity
-
- Place of Origin
- China
- Payment Terms
- T/T
- Production method
- Negotiable
- Shipping / Lead Time
- Negotiable / Negotiable
- Category
- Semiconductors
Suzhou Hengmairui Materials Technology Co.,Ltd.
- Verified Certificate
-
9
Product name | Silicon Carbide wafer SiC semiconductor wafer manufacturer | Certification | - |
---|---|---|---|
Category | Semiconductors | Ingredients | - |
Keyword | silicon carbide wafer , sic semiconductor wafer | Unit Size | - |
Brand name | - | Unit Weigh | - |
origin | China | Stock | - |
Supply type | - | HS code | - |
Product Information
Homray Material Technology offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,
established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China's Semiconductor Lab,we are devoted to continuously improve the quality of currently substates and develop large size substrates.
Place of Origin: China (Mainland)
Brand Name: Homray Material Technology
Grade:Production Grade/Research Grade/Dummy Grade
Type: 4H-N/6H-N 4/6H-SI
Size:2/3/4/6
Application: semiconductor
B2B Trade
Price (FOB) | Negotiable | transportation | - |
---|---|---|---|
MOQ | Negotiable | Leadtime | Negotiable |
Payment Options | T/T | Shipping time | Negotiable |
- President
- Cory
- Address
- LiSheng Industrial Building,60 Suli Road
- Product Category
- Semiconductors
- Year Established
- 2009
- No. of Total Employees
- 51-100
- Company introduction
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Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.
- Main Product