FA-RTP can be profit for the processes that require minimization of process time and thermal buggets of substrated such as thin gate oxidation, rapid annealing of deposited film, etc.

Application

• Generally, AM-OLED, TFT-LCD, Low-K dielectrics, post implanting annealing, semi-conductor fabrication.
  

Technology

• Optimized hardware and temperature control
• Excellent temperature uniformity
• Capability of alternative ATM & vacuum process
• 2~4 inch wafer mountable
• Bench top type of compact design (L700mm x W400mm x D450mm)
  

Specification

• 1 rectangular type process vacuum chamber
• water cooling for chamber wall /radiation shield
• Ni-Au surface coating for reflector
• O-ring sealed sliding door
• Double side radiation heating with halogen lamp
• Ramping ratio of temperature : heating up to 1,000 °C
• Temperature uniformity : Ø2% on 4 inch wafe
• Programmable temp. controller
• 2~4 inch wafer mountable
• Low vacuum pumping system
• Up to three(3) gas lines
• User friendly PLC control with touch panel