Providing a variety of targets used for CIGS thin-film panel

1, CIGS Target

1.1 Compound: Atomic ratio: 1: 0.7: 0.3: 2 (customized proportion available );
1.2 Process: Hot process and cold process /sintering;
1.3 Purity: 99.99% above;
1.4: Analysis: ICP-MS; XRD;
ICP-MS: The totals of impurity elements is below 10ppm;
XRD: CIGS has chalcopyrite structure;
1.5: Density: 93% above;
1.6: Service availability:
Free charge sample: TCO glass substrate, Selenium powder for selenium annealing.
1.7: MSDS;

2, Selenide Targets:
In2Se3, Ga2Se3, Cu2Se, CuSe target;

3, Alloy Targets:
CuGa, CuIn, CuInGa target;

4, Metal target: Cu; In; Se;

5, Other target: CdS, ZnS, ZnSe, AZO, Mo;