Gallium oxide, Ga2O3, powder, sputteirng target

Gallium oxide, Ga2O3, powder, sputteirng target


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Keyword
gallium, sputtering target, thin film coating, ga2o3
Category
Industrial Supplies , Semiconductors , Oxide

Huizhou Tian Yi Rare Material Co.,Ltd

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BIZ
Country / Year Established
China China /
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Others
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Product name Gallium oxide, Ga2O3, powder, sputteirng target Certification -
Category Industrial Supplies
Semiconductors
Oxide
Ingredients -
Keyword gallium , sputtering target , thin film coating , ga2o3 Unit Size -
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Product Information

Gallium (III) oxide, Ga2O3, CAS: 12024-21-4 

 

Gallium oxide, Ga2O3 product list from TYR as following:

 

High pure Gallium oxide, Ga2O3 powder, Beta type Ga2O3 powder and Alfa type Ga2O3 powder, purity: 99.99%, 99.999%,  powder size: <10um, -325 mesh e.t.c

 

Gallium oxide, Ga2O3 Sputtering targets: purity: 99.99%, Ga2O3 doped other element sputtering targets, like Ga2O3-ZnO (GZO), Ga2O3-In2O3-ZnO (GIZO) targets, Size: max. 355.6mm (14 inch) , Length: 250mm x Width 200mm x thickness 20mm max.,  Shape: Discs, disks, step disk, delta, plate, sheets or made per drawing

 

Gallium oxide, Ga2O3 Evaporating coating material: purity: 99.99%,   Size: 8 x 6, 10 x 8, 1-6mm or made per requested, Shape: Sintered pieces, tablets, chunks, pellets e.t.c, 

 

Gallium (III) oxide (Ga2O3) is a chemical compound used in vacuum deposition and as part of the manufacturing of semiconductor devices. Gallium oxide is a white powder insoluble in water, but soluble in hot alkalis and acids

 

Gallium oxide is precipitated in hydrated form upon neutralization of acidic or basic solution of gallium salt. Also, it is formed on heating gallium in air or by thermally decomposing gallium nitrate at 200-250˚C. It can occur in five different modifications, α,β,δ,γ and ε. Of these modifications β-Ga2O3 is the most stable form.

 

β-Ga2O3 is prepared by heating nitrate, acetate, oxalate or other organic derivatives above 1000˚C. The β-Ga2O3, with a melting point of 1740˚C, density is 5.88g/cm3

α-Ga2O3 density is 6.44g/cm3.  can be obtained by heating β-Ga2O3 at 65kbars and 1100˚C for 1 hour giving a crystalline structure. The hydrated form can be prepared by decomposing precipitated and "aged" gallium hydroxide at 500˚C.

 

Applications and Uses: Catalyst, Optical Uses, Vacuum deposition as a chemical intermediate, and in semiconductor electronics, Nanotechnology , Scanning electron microscopy , Transmission electron microscopy, Ellipsometry,. Possible uses for Ga2O3 include piezoelectric resonators and transducers.

 

Gallium(III) oxide is an important functional material. It has been studied in the use of lasers, phosphors and luminescent materials, has been shown to demonstrate catalytic properties and has also been used as an insulating barrier in tight junctions. The stable oxide of gallium, monoclinic β-Ga2O3, has current applications in gas sensors and luminescent phosphors and can be applied to dielectric coatings for solar cells. This stable oxide has also shown potential for deep-ultraviolet transparent conductive oxides.

It is important to accurately determine the optical functions as these are essential for device simulations and improvement in material preparation. The thin Ga2O3 films are of commercial interest as gas sensitive material and Ga2O3 based glasses are among the best optical materials used in advanced technologies. Ellipsometry is a procedure that can be used to determine optical functions of the β-Ga2O3.

β-Gallium (III) oxide is also very important in the production of catalysts . It is needed for the preparation of Ga2O3-Al2O3 catalyst. The preparation of this catalyst involves reacting Al2O3 with aqueous solutions of gallium nitrate, followed by evaporation to dryness at 393K, and calcining in air (i.e.thermal decomposition of the compound) for 4 hours at 823K.

 

 

 

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Huizhou Tian Yi Rare Material Co.,Ltd

Country / Year Established
China China /
Membership
BIZ
Business type
Others

11

President
Amy Chiu
Address
12 K of Shiji, Shijixingtian Bldg, YanDa Road, Huizhou, China
Product Category
Industrial Supplies,Other Minerals & Metallurgy Products,Semiconductors
No. of Total Employees
1-50
Company introduction
TYR has been established in 2004 year, specializes in a wide category of sputtering targets, evaporation source material, rare earth material and chemistry reagent, PVD materials base on metals, alloys, compounds. we offer targets bonding service, we serving government research establishments, universities and high technology industries. We using a variety of specialized processes including hot pressing, hot/cold isostatic pressing, and vacuum melting, vacuum sintering, we can provide the kind of homogenous, fine-grained, high-density materials that conform to the strictest quality control, we always aim to put quality first. Our product list include Metal sputtering targets, Alloy sputtering targets, Noble metal sputtering targets, Noble alloy sputtering targets, Oxide Ceramic Sputtering targets, Boride Ceramic Sputtering Targets, Carbide Ceramic Sputtering Targets, Fluoride Ceramic Sputtering Targets, Nitride Ceramic Sputtering Targets, Sulfide Ceramic Sputtering Targets, Selenide Ceramic Sputtering Targets, Silicide Ceramic Sputtering Targets, Telluride Ceramic Sputtering Targets, metal evaporation source, alloy evaporation source, optical thin film coating material, rare earth oxide and each high pure chemistry reagent. Sputtering Targets Materials list: High Pure Metal Sputtering Targets: Aluminum (Al),Antimony (Sb), Bismuth (Bi), Boron (B), Cadmium (Cd), Cerium (Ce), Chromium (Cr), Cobalt (Co), Copper (Cu), Dysprosium (Dy), Erbium (Er), Eur (Eu), Gadolinium (Gd), Germanium (Ge), Gold (Au), Graphite, (C), Hafnium (Hf), Holmium (Ho), Iridium (Ir), Indium (In), Iron (Fe), Lanthanum (La), Lead (Pb), Lutetium (Lu), Manganese (Mn), Molybdenum (Mo), Magnesium (Mg), Neodymium (Nd), Niobium (Nb), Nickel (Ni), Palladium (Pd), Platinum (Pt), Praseodymium (Pr), Rhenium (Re), Ruthenium (Ru), Samarium (Sm), Scandium (Sc), Selenium (Se), Silicon (Si), Silver (Ag), Tantalum (Ta), Terbium (Tb), Tellurium (Te),Tin (Sn), Thulium (Tm), Titanium (Ti), Tungsten (W), Vanadium (V), Ytterbium (Yb), Yttrium (Y), Zirconium (Zr), Zinc (Zn) ; Alloy Sputtering Targets: Al alloy targets, Al-Cu, Al-Cr, Al-Nd, Al-Si, Al-Si-Cu, Al-Ag Cu alloy targets: Cu-Ag, Cu-Co, Cu-Ga, Cu-In, Cu-Ni Co alloy targets: Co-Cr, Co-Cr-Mo, Co-Fe, Co-Fe-B ,Co-Ni, Co-Ni-Cr, Co-Pt Ni alloy targets: Ni-Al, Ni-Cr, Ni-Cr-Si, Ni-Fe, Ni-Mn, Ni-Ti, Ni-V, Ti alloy targets: Ti-Al, Ti-Ni, Ti-Zr, Ti-Co Ta alloy targets: Ta-Al, Ta-W W alloy targets: W-Ti, W-Mo, W-B, W-Re Mo alloy targets: Mo-Nb, Mo-Si, Mo-Al Fe alloy targets: Fe-B, Fe-Co, Fe-Mn, Fe-Hf, Fe-Gd, Fe-Tb Zr alloy targets: ZrAl, ZrCu, ZrFe, ZrNb, ZrNi, ZrTi, ZrY, Noble alloy targets: Au-Ag, Ag-Cu, Ir-Mn, Ir-Re, Ir-Ru, Au-Sn, Ag-In, Ag-Sn e.t.c Ceramic sputtering target: Oxide Ceramic Sputtering targets: Al2O3, AZO, Sb2O3, ATO, BaTiO3, Bi2O3, CeO2, CuO, Cr2O3, Dy2O3, Er2O3, Eu2O3, Gd2O3, Ga2O3, GeO2, HfO2, Ho2O3, In2O3, In2O3-SnO2 (ITO), Fe2O3, Fe3O4, La2O3, PbTiO3, PbZrO3, LiNbO3, Lu2O3, MgO, MoO3, Nd2O3, Sm2O3, Sc2O3, SiO2, SiO, SrTiO3, SrZrO3, Ta2O5, Tb4O7, TeO2, Tm2O3, TiO, TiO2, Ti3O5, Ti2O3, SnO2, SnO, WO3, WO3-Li, V2O5, VO2, Yb2O3, Y2O3, Y2O3-ZrO2 (YSZ), YBCO, ZnO, ZnO:Al, ZnO-In2O3, ZrO2, ZrO2-5-15wt%CaO) Boride Ceramic Sputtering Targets: Cr2B, CrB, CrB2, FeB, HfB2 ,LaB6, Mo2B, Mo2B5 ,NbB, TaB2, TiB2, W2B5, WB, VB, YB6, ZrB2 Carbide Ceramic Sputtering Targets : B4C, Cr3C2, HfC, Mo2C, NbC, SiC, TaC, TiC, WC, W2C, VC, ZrC Fluoride Ceramic Sputtering Targets : AlF3, BaF2, CaF2, LiF, MgF2, NaF, Na3AlF6, YF3, YbF3 Nitride Ceramic Sputtering Targets :AlN, BN, HfN, NbN, Si3N4, TaN, TiN, VN, ZrN Sulfide Ceramic Sputtering Targets: CuS, Cu2S, CdS, FeS, FeS2, GeS, SnS, In2S3, MoS2, TaS2, WS2, ZnS Selenide Ceramic Sputtering Targets: Bi2Se3, CdSe, CuSe, Ga2Se3, In2Se3, PbSe, MoSe2, NbSe2, TaSe2, WSe2, ZnSe Silicide Ceramic Sputtering Targets: Cr3Si, CrSi2, CoSi2, HfSi2, MoSi2, NbSi2, TaSi2, Ta5Si3, TiSi2, Ti5Si3, WSi2, V3Si, VSi2, ZrSi2 Telluride Ceramic Sputtering Targets: Bi2Te3, CdTe, CuTe, Ga2Te3, GeTe, PbTe, MoTe2, NbTe2, TaTe2, WTe2, ZnTe
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