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Hafnium oxide, HfO2, sputtering target, evaporation material, thin film coating material

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Keyword: evaporation, sputtering target, hafnium, thin film

Category: Industrial Supplies , Other Chemicals , Semiconductors , Oxide

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Huizhou Tian Yi Rare Material Co.,Ltd

Membership: BIZ

Country / Year Established: China /

Business type: Others

Verified Certificate: 10

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Product name	Hafnium oxide, HfO2, sputtering target, evaporation material, thin film coating material	Certification	-
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Hafnium oxide, HfO2 CAS: 12055-23-1

Hafnium oxide (HfO2) product list from TYR as following:

High pure Hafnium oxide (HfO2) powder: purity: 99.95%, 99.99%, powder size: <10um, -325 mesh e.t.c

Hafnium oxide (HfO2) Sputtering targets: purity: 99.95%, 99.99%, Size: max. 355.6mm (14 inch) , Length: 250mm x Width 200mm x thickness 20mm max., Shape: Discs, disks, step disk, delta, plate, sheets or made per drawing, Color: White or black (see item descr.)

Hafnium oxide (HfO2) Evaporating coating material: purity: 99.95%, 99.99%, Size: 8 x 6, 10 x 8, 1-6mm or made per requested, Shape: Sintered pieces, tablets, chunks, pellets e.t.c, Color: White or black (see item descr.)

Molecular Weight: 210.49g/mol., Density: 9.68g/cm3, Melting Point: 2758°C, , Softening temp. : ~1100- 1500°C, Boiling Point : 5400°C, Bulk Density; 1922-2883 kg/m3, Solubility In Water, insoluble Appearance: white powder

Hafnium oxide (HfO2) is the inorganic compound with the formula HfO2. Also known as hafnia, this colourless solid is one of the most common and stable compounds of hafnium. It is an electrical insulator with a band gap of approximately 6 eV. Hafnium dioxide is an intermediate in some processes that give hafnium metal.

Hafnium oxide (HfO2) is quite inert. It reacts with strong acids such as concentrated sulfuric acid and with strong bases. It dissolves slowly in hydrofluoric acid to give fluorohafnate anions. At elevated temperatures, it reacts with chlorine in the presence of graphite or carbon tetrachloride to give hafnium tetrachloride.

Applications:

Hafnium oxide (HfO2) is a high-index, low absorption material, used in optical coatings, and as a high-k dielectric in DRAM capacitors, typical applications include near-UV laser AR and dielectric mirror designs. Hafnium-based oxides are currently leading candidates to replace silicon oxide as a gate insulator in field effect transistors. The advantage for transistors is its high dielectric constant: The dielectric constant of HfO2 is 15.6, whereas the dielectric constant of SiO2 is only 3.9.

The compound appears to have been chosen by both IBM and Intel as a substrate for future integrated circuits, where it may help in the continuing effort to increase logic density and clock speeds, or to lower power consumption, in computer processors.

Because of its very high melting point, hafnia is also used as a refractory material in the insulation of such devices as thermocouples, where it can operate at temperatures up to 2500 °C

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Huizhou Tian Yi Rare Material Co.,Ltd

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Country / Year Established: China /

Membership: BIZ

Business type: Others

President: Amy Chiu

Address: 12 K of Shiji, Shijixingtian Bldg, YanDa Road, Huizhou, China

Product Category: Industrial Supplies,Other Minerals & Metallurgy Products,Semiconductors

No. of Total Employees: 1-50

Company introduction: TYR has been established in 2004 year, specializes in a wide category of sputtering targets, evaporation source material, rare earth material and chemistry reagent, PVD materials base on metals, alloys, compounds. we offer targets bonding service, we serving government research establishments, universities and high technology industries. We using a variety of specialized processes including hot pressing, hot/cold isostatic pressing, and vacuum melting, vacuum sintering, we can provide the kind of homogenous, fine-grained, high-density materials that conform to the strictest quality control, we always aim to put quality first. Our product list include Metal sputtering targets, Alloy sputtering targets, Noble metal sputtering targets, Noble alloy sputtering targets, Oxide Ceramic Sputtering targets, Boride Ceramic Sputtering Targets, Carbide Ceramic Sputtering Targets, Fluoride Ceramic Sputtering Targets, Nitride Ceramic Sputtering Targets, Sulfide Ceramic Sputtering Targets, Selenide Ceramic Sputtering Targets, Silicide Ceramic Sputtering Targets, Telluride Ceramic Sputtering Targets, metal evaporation source, alloy evaporation source, optical thin film coating material, rare earth oxide and each high pure chemistry reagent. Sputtering Targets Materials list: High Pure Metal Sputtering Targets: Aluminum (Al),Antimony (Sb), Bismuth (Bi), Boron (B), Cadmium (Cd), Cerium (Ce), Chromium (Cr), Cobalt (Co), Copper (Cu), Dysprosium (Dy), Erbium (Er), Eur (Eu), Gadolinium (Gd), Germanium (Ge), Gold (Au), Graphite, (C), Hafnium (Hf), Holmium (Ho), Iridium (Ir), Indium (In), Iron (Fe), Lanthanum (La), Lead (Pb), Lutetium (Lu), Manganese (Mn), Molybdenum (Mo), Magnesium (Mg), Neodymium (Nd), Niobium (Nb), Nickel (Ni), Palladium (Pd), Platinum (Pt), Praseodymium (Pr), Rhenium (Re), Ruthenium (Ru), Samarium (Sm), Scandium (Sc), Selenium (Se), Silicon (Si), Silver (Ag), Tantalum (Ta), Terbium (Tb), Tellurium (Te),Tin (Sn), Thulium (Tm), Titanium (Ti), Tungsten (W), Vanadium (V), Ytterbium (Yb), Yttrium (Y), Zirconium (Zr), Zinc (Zn) ; Alloy Sputtering Targets: Al alloy targets, Al-Cu, Al-Cr, Al-Nd, Al-Si, Al-Si-Cu, Al-Ag Cu alloy targets: Cu-Ag, Cu-Co, Cu-Ga, Cu-In, Cu-Ni Co alloy targets: Co-Cr, Co-Cr-Mo, Co-Fe, Co-Fe-B ,Co-Ni, Co-Ni-Cr, Co-Pt Ni alloy targets: Ni-Al, Ni-Cr, Ni-Cr-Si, Ni-Fe, Ni-Mn, Ni-Ti, Ni-V, Ti alloy targets: Ti-Al, Ti-Ni, Ti-Zr, Ti-Co Ta alloy targets: Ta-Al, Ta-W W alloy targets: W-Ti, W-Mo, W-B, W-Re Mo alloy targets: Mo-Nb, Mo-Si, Mo-Al Fe alloy targets: Fe-B, Fe-Co, Fe-Mn, Fe-Hf, Fe-Gd, Fe-Tb Zr alloy targets: ZrAl, ZrCu, ZrFe, ZrNb, ZrNi, ZrTi, ZrY, Noble alloy targets: Au-Ag, Ag-Cu, Ir-Mn, Ir-Re, Ir-Ru, Au-Sn, Ag-In, Ag-Sn e.t.c Ceramic sputtering target: Oxide Ceramic Sputtering targets: Al2O3, AZO, Sb2O3, ATO, BaTiO3, Bi2O3, CeO2, CuO, Cr2O3, Dy2O3, Er2O3, Eu2O3, Gd2O3, Ga2O3, GeO2, HfO2, Ho2O3, In2O3, In2O3-SnO2 (ITO), Fe2O3, Fe3O4, La2O3, PbTiO3, PbZrO3, LiNbO3, Lu2O3, MgO, MoO3, Nd2O3, Sm2O3, Sc2O3, SiO2, SiO, SrTiO3, SrZrO3, Ta2O5, Tb4O7, TeO2, Tm2O3, TiO, TiO2, Ti3O5, Ti2O3, SnO2, SnO, WO3, WO3-Li, V2O5, VO2, Yb2O3, Y2O3, Y2O3-ZrO2 (YSZ), YBCO, ZnO, ZnO:Al, ZnO-In2O3, ZrO2, ZrO2-5-15wt%CaO) Boride Ceramic Sputtering Targets: Cr2B, CrB, CrB2, FeB, HfB2 ,LaB6, Mo2B, Mo2B5 ,NbB, TaB2, TiB2, W2B5, WB, VB, YB6, ZrB2 Carbide Ceramic Sputtering Targets : B4C, Cr3C2, HfC, Mo2C, NbC, SiC, TaC, TiC, WC, W2C, VC, ZrC Fluoride Ceramic Sputtering Targets : AlF3, BaF2, CaF2, LiF, MgF2, NaF, Na3AlF6, YF3, YbF3 Nitride Ceramic Sputtering Targets :AlN, BN, HfN, NbN, Si3N4, TaN, TiN, VN, ZrN Sulfide Ceramic Sputtering Targets: CuS, Cu2S, CdS, FeS, FeS2, GeS, SnS, In2S3, MoS2, TaS2, WS2, ZnS Selenide Ceramic Sputtering Targets: Bi2Se3, CdSe, CuSe, Ga2Se3, In2Se3, PbSe, MoSe2, NbSe2, TaSe2, WSe2, ZnSe Silicide Ceramic Sputtering Targets: Cr3Si, CrSi2, CoSi2, HfSi2, MoSi2, NbSi2, TaSi2, Ta5Si3, TiSi2, Ti5Si3, WSi2, V3Si, VSi2, ZrSi2 Telluride Ceramic Sputtering Targets: Bi2Te3, CdTe, CuTe, Ga2Te3, GeTe, PbTe, MoTe2, NbTe2, TaTe2, WTe2, ZnTe