Outline

Rapid thermal process system of the VTS corporation is an R&D equipment for vacuum heat treatment of a various kind of thin films including metal, alloy and non-metal oxide. It is composed of a reactor to load one 1sheet of 6inch wafer, a radiation type heater having temperature stability and re-productivity, and a vacuum system. The reactor consists of quartz tube, wafer holding and transporting modules. The heater has a adopted a radiation lamp type with ±5% of temperature uniformity.

Features

1. Hot wall furnace’s function

2. Heating up to 1000℃ within 20sec

General Specification

1. Substrate materials: Graphite

2. Substrate size: Dia. 6inch wafer mountable

3. Base pressure: < 3E-3 Torr after nitrogen purge

4. Temperature: Max 1000℃ within 20sec

5. Heating up rate: 10 ~ 100℃/sec

6. Cooling down rate: 50℃/sec

7. Temp. uniformity: ≤ ±5% @ set point