GaN Wafers free standing Gallium Nitride substrate wafer
Negotiable Min Order Quantity Unit
- Required Quantity
-
- Place of Origin
- China
- Payment Terms
- T/T
- Production method
- Negotiable
- Shipping / Lead Time
- Negotiable / Negotiable
- Category
- Semiconductors
Suzhou Hengmairui Materials Technology Co.,Ltd.
- Verified Certificate
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Product name | GaN Wafers free standing Gallium Nitride substrate wafer | Certification | - |
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Category | Semiconductors | Ingredients | - |
Keyword | gan wafer supplier , gallium nitride substrate wafer , free standing gan wafer | Unit Size | - |
Brand name | - | Unit Weigh | - |
origin | China | Stock | - |
Supply type | - | HS code | - |
Product Information
GaN Wafers free standing Gallium Nitride substrate wafer
Homray Material Technology plans to be a manufacturer of gallium nitride substrate for the wide band-gap power semiconductor and LED markets. Homray Material Technology manufactures GaN substrate, Gallium Nitride substrate,GaN template,GaN wafer, free-standing GaN wafer these to integrated device manufacturers to create high performance power and RF device.
HomrayMaterial ’s key advantage is our wealth of materials growth experience in GaN single crystal growth, owning essential patents in GaN substrates growth technologies.HomrayMaterial offers standard and customized free-standing GaN substrates with extra low dislocation densities and thick AlN/Sapphire templates, which are suitable for applications in high-power LED, blue LD, high power and high frequency devices and UV LED.
B2B Trade
Price (FOB) | Negotiable | transportation | - |
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MOQ | Negotiable | Leadtime | Negotiable |
Payment Options | T/T | Shipping time | Negotiable |
- President
- Cory
- Address
- LiSheng Industrial Building,60 Suli Road
- Product Category
- Semiconductors
- Year Established
- 2009
- No. of Total Employees
- 51-100
- Company introduction
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Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.
- Main Product