As one of global GaN on SiC Epi Wafer Suppliers, HMT usually offer 4'' 6'' and 8'' AlGaN/GaN on SiC Epi Wafer with SiN cap, GaN cap or pGaN Cap. We have both D-Mode and E-Mode and RF structure for GaN on SiC. 

GaN-on-SiC epi wafers combine the high electron mobility of GaN with the superior thermal conductivity of SiC, making them ideal for:

• High-power RF applications (e.g., radar, 5G base stations)

• Power electronics (e.g., EV inverters, fast chargers).

• Aerospace & defense systems (e.g., phased-array radars, satellite comms)

Key Advantages:
✔ Higher power density (vs. GaN-on-Si or LDMOS).
✔ Better thermal management (SiC’s thermal conductivity ≈ 3x Si).
✔ Wider bandgap (3.4 eV for GaN, 3.3 eV for SiC), enabling high-voltage operation.

As one of global GaN on SiC Epi Wafer Suppliers, HMT usually offer 4'' 6'' and 8'' AlGaN/GaN on SiC Epi Wafer with SiN cap, GaN cap or pGaN Cap. We have both D-Mode and E-Mode and RF structure for GaN on SiC. 

GaN-on-SiC epi wafers combine the high electron mobility of GaN with the superior thermal conductivity of SiC, making them ideal for:

• High-power RF applications (e.g., radar, 5G base stations)

• Power electronics (e.g., EV inverters, fast chargers).

• Aerospace & defense systems (e.g., phased-array radars, satellite comms)

Key Advantages:
✔ Higher power density (vs. GaN-on-Si or LDMOS).
✔ Better thermal management (SiC’s thermal conductivity ≈ 3x Si).
✔ Wider bandgap (3.4 eV for GaN, 3.3 eV for SiC), enabling high-voltage operation.